SK hynix launches U.S. AI memory packaging plant

WEST LAFAYETTE, Indiana — SK hynix held a groundbreaking ceremony Thursday for an advanced packaging production facility for artificial intelligence memory at Purdue University in West Lafayette, Indiana, marking the South Korean chipmaker's first next-generation High Bandwidth Memory (HBM) production hub in the United States.

The project, with a total investment estimated at over US$4 billion, is designed to produce hundreds of thousands of wafers annually. HBM is a critical component of advanced chips that power AI systems.

According to the company, the Indiana fab's cleanroom is scheduled to open by October 2028, with mass production of next-generation HBM planned for the second half of 2029. SK hynix projects the facility will become a key HBM production base in the U.S. by 2030, employing about 1,000 personnel during commercial operations.

Alongside the production lines, the chipmaker plans to build an "advanced packaging research and development testbed" that will allow customers, universities and business partners to collaborate on packaging technologies, prototype fabrication and performance validation.

SK hynix said cutting-edge wafers produced in South Korea will be delivered to Indiana, where they will undergo advanced packaging and testing before "made-in-U.S.A." products are supplied to American big-tech companies such as Nvidia.

Official attendance and remarks

The ceremony drew senior Korean and U.S. officials and politicians, including Korean Ambassador to the U.S. Kang Kyung-wha, Indiana Governor Mike Braun, U.S. Senator Todd Young (R-IN), SK Group Vice Chairman Yu Jeong-Joon, Vice Chairman Lee Hyung-hee and SK hynix CEO Kwak Noh-Jung.

"Today is not just the start of a construction project. Today, SK hynix begins building a new future for AI in the United States," Kwak said at the event.

Ambassador Kang highlighted the importance of cooperation between "trusted" partners, while Sen. Young said the project will strengthen America's national and economic security. "I was proud to help make this investment possible through the CHIPS and Science Act," Young said.

The U.S. Commerce Department announced in December 2024 its decision to provide up to $458 million in direct funding and up to $500 million in loans to SK hynix under the CHIPS Act.

Product details and technology

SK hynix's latest HBM product is the sixth-generation HBM4, which stacks 12 DRAM chips and is used in Nvidia Corp.'s latest AI accelerator, Vera Rubin. The products to be manufactured at the Indiana facility will be seventh-generation HBM4E chips. Earlier, SK hynix said it had completed sample shipments of HBM4E chips to customers.

The company has also signed a memorandum of understanding with Purdue University to strengthen research and development capabilities.

CEO comments on Japan cooperation

Speaking to reporters after the ceremony, CEO Kwak Noh-jung said SK hynix is exploring ways to deepen its cooperation with Japanese customers and suppliers in the memory industry.

"We are very carefully looking at how we can co-develop the NAND flash market with our customers and suppliers," he said.

Kwak added that the company does not have "any fixed plans" regarding its significant indirect stake in Kioxia Holdings.